Compensating Probe Misplacements in On-Wafer <i>S</i>-Parameters Measurements

As the maximum frequency of electronics is rising, on-wafer measurements play an important role in modeling integrated devices. Most time, due to lack measurement accuracy beyond 110 GHz, such models are usually extracted at frequencies much below their working and subsequently extrapolated. The validity then mostly verified after fabrication complete chip, with a simple pass fail test. This stating necessity enhancing results by any means possible, i.e., reduce overall uncertainty measurements. It widely accepted that one main sources probe contact repeatability, since it difficult reach position few micrometers. We presenting this article method model $S$ -parameter variation on pads, which can be used either estimate repeatability or further enhance results. approach validated based performed 500 GHz.